Link: MAM2024

MAM 2024 (Materials for Advanced Metallization Conference) was the 31st in a series of conferences devoted to research on materials and processes for the back and front end of the line, including interconnect and silicide materials. The objective of the conference is to provide a forum for open discussions across fundamental and applied sciences and industrial applications.

During the conference, the GaN4AP partners (DTSMNS-CNR, ST, UNITOU, IUNET-UNIMORE) contributed invited lectures in the Workshop on Wide Band Gap Semiconductors and Devices.

The speakers gave the  following invited talks:

• F. Roccaforte (DTSMNS-CNR, Italy) – Novel Trends in Interface Engineering for Wide Band Gap (SiC and GaN) power devices
• F. Iucolano (ST-I, Italy) – GaN devices: Industrial trends and challenges
• D. Alquier (UNITOU, France) – Contact Strategies for SiC Power Devices
• A. Chini (IUNET-UNIMORE, Italy) – Characterization and Modelling of C-doped buffers in GaN HEMTs

The conference was a great success with respect of previous editions, since it counted 129 participants attending the workshop dedicated to WBG semiconductors.