Articles in peer reviewed journals
F. Roccaforte, F. Giannazzo, F. Greco, Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices, Micro 2(1), 23-53 (2022).
R. Lo Nigro, P. Fiorenza, G. Greco, E. Schilirò, F. Roccaforte, Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices, Materials 15, 830 (2022).
K. Grabianska, R. Kucharski, T. Sochacki, J.L. Weyher, M. Iwinska, I. Grzegory, M. Bockowski, On Stress-Induced Polarization Effect in Ammonothermally Grown GaN, Crystals 12, 554 (2022).
M. Bockowski, I. Grzegory, Recent progress in crystal growth of bulk GaN, Acta Physica Polonica A, 141 (3), 167-174 (2022).
C. Bimbi, S. Pennisi, S. Privitera, F. Pulvirenti, Single-Branch Wide-Swing-Cascode Subthreshold GaN Monolithic Voltage Reference, Electronics, 11 (12), 1840 (2022).
T. Sochacki, R. Kucharski, K. Grabianska, J. L. Weyher, M. Iwinska, M. Bockowski, L. Kirste, Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seedle-Branch Wide-Swing-Cascode Subthreshold GaN Monolithic Voltage Reference, Materials, 15 (13), 4621 (2022).
L. Kirste, T. Nhi T. Thi Caliste, J. L.Weyher, J. Smalc-Koziorowska, M. A. Zajac, R. Kucharski, T. Sochacki, K. Grabianska, M. Iwinska, C.Detlefs, A. N. Danilewsky, M. Bockowski, J. Baruchel, Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN CrystalsSingle-Branch Wide-Swing-Cascode Subthreshold GaN Monolithic Voltage Reference, Materials, 15 (19), 6996 (2022).
L. Konczewicz, M. Iwinska, E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon ,M. Chlipała,, S. Juillaguet, S. Contreras, Negative Magnetoresistivity in Highly Doped n-Type GaN, Materials, 15 (20), 7069 (2022).
L. Balestra, E. Gnani, S. Reggiani, Electron effective masses of ScxAl1−xN and AlxGa1−xN from first-principles calculations of unfolded band structure, J. Appl. Phys. 132, 215108 (2022).
Greco, P. Fiorenza, F. Giannazzo, C. Bongiorno, M. Moschetti, C. Bottari, M.S. Alessandrino, F. Iucolano, F. Roccaforte, Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs, Appl. Phys. Lett. 121, 233506 (2022).
C. Elias, M. Nemoz, H. Rotella, F. Georgi, S. Vezian, M. Hugues, Y. Cordier, Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN, APL Mater. 11, 031105 (2023).
Vella, G. Galioto, G. Vitale, G. Lullo, G.C. Giaconia, GaN and SiC devices characterization by a dedicated embedded measurement system, Electronics 12, 1555 (2023).
Greco, P. Fiorenza, E. Schilirò, C. Bongiorno, S. Di Franco, P-M. Coulon, E. Frayssinet, F. Bartoli, F. Giannazzo, D. Alquier, Y. Cordier, F. Roccaforte, Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates, Microelectronic Engineering 276, 112009 (2023).
Mauduit, T. Slimani Tlemcani, M. Zhang, A. Yvon, N. Vivet, M. Charles, R. Gwoziecki, D. Alquier, Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN, Microelectronics Engineering 277, 112020 (2023).
Jaroszynski, E. Grzanka, M. Grabowski, G. Staszczak, I. Prozheev, R. Jakiela, F. Tuomisto, M. Bockowski, Europium diffusion in ammonothermal gallium nitride, Europium diffusion in ammonothermal gallium nitride, Appl. Surf. Sci. 625, 157188 (2023).
Sochacki, R. Kucharski, K. Grabianska, J.L. Weyher, M.A. Zajac, M. Iwinska, L. Kirste, M. Bockowski, Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN, Materials 16(9), 3360 (2023).
Chini, N. Zagni, G. Verzellesi, M. Cioni, G. Giorgino, M. Nicotra, M.E. Castagna, F. Iucolano, Gate-Bias Induced RON Instability in p-GaN Power HEMTs, IEEE Electron Devices Letters 44(6), 915-918 (2023).
G. Giorgino. G. Greco, M. Moschetti, C. Miccoli, M.E. Castagna, C. Tringali, P. Fiorenza, F. Roccaforte, F. Iucolano, “Study of Magnesium Activation Effect on Pinch-Off voltage of Normally-Off p-GaN HEMTs for Power Applications”, Crystals (2023) 13, 1309 (2023).
Samba Ndiaye, Caroline Elias, Aïssatou Diagne, Hélène Rotella, Frédéric Georgi, Maxime Hugues, Yvon Cordier, François Vurpillot, Lorenzo Rigutti, “Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography”, Appl. Phys. Lett. 123, 162102 (2023).
K. Samperi, N. Spina, A. Castorina, A. Pavlin, S. Pennisi, G. Palmisano, “GaN Monolithic PWM Generator with Dynamic Offset Compensation“, IEEE Access 11, 126892-126899 (2023).
M. Bah, D. Alquier, M. Lesecq, N. Defrance, D. Valente, T.H. Ngo, E. Frayssinet, M. Portail, J-C. De Jaeger, Y. Cordier, “Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors”, Materials Science in Semiconductor Processing 171, 107977 (2024).
N. Spina, K. Samperi, A. Pavlin, S. Pennisi, G. Palmisano, “Fully Integrated Galvanic Isolation Interface in GaN Technology”, IEEE Transactions on Circuits and Systems I: Regular Papers vol. 70(11), 4605-4614 (2023).
S. Spataro, E. Ragonese, N. Spina, G. Palmisano, A GaN-integrated galvanically isolated data link based on RF planar coupling with voltage combining for gate-driver applications, IEEE Access vol 12, 48530 – 48539, (2024).
G. Giorgino, M. Cioni, C. Miccoli, L. Gervasi, M.F.S. Giuffrida, M. Ruvolo, M.E. Castagna, G. Cappellini, G. Luongo, M. Moschetti, A. Constant, C. Tringali, F. Iucolano, A. Chini, “Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies“, e-Prime – Advances in Electrical Engineering, Electronics and Energy 6, 100338 (2023).
F. Giannazzo, S.E. Panasci, E. Schilirò, G. Greco, F. Roccaforte, G. Sfuncia, G. Nicotra, M. Cannas, S. Agnello, E. Frayssinet, Y. Cordier, A. Michon, A. Koos, B. Pécz, “Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN“, Appl. Surf. Sci. 631, 157513 (2023).
I. Streicher, S. Leone, M. Zhang, T. Slimani Tlemcani, M. Bah, P. Straňák, L. Kirste, M. Prescher, A. Yassine, D. Alquier, O. Ambacher, “Understanding Interfaces in AlScN/GaN Heterostructures”, Adv. Funct. Mater. (2024), 2403027.
Z. Dahrouch, G. Malta, M. d’Ambrosio, A.A. Messina, M. Musolino, A. Sitta, M. Calabretta, S. Patanè, Assessing the Stress Induced by Novel Packaging in GaN HEMT Devices via Raman Spectroscopy, Appl. Sci. 14, 4230 (2024).
M. Zak, P. Kempisty, B. Lucznik, K. Grabianska, R. Kucharski, M. Iwinska, M. Bockowski, “Modeling of convective transport in crystallization of gallium nitride by basic ammonothermal method”, Journal of Crystal Growth 627. 127525 (2024).
N. Zagni, G. Verzellesi, A. Bertacchini, M. Borgarino, F. Iucolano and A. Chini, “Hole Virtual Gate Model Explaining Surface-Related Dynamic“, IEEE Electron Device Letters 45 (5), 801-804, (2024).
Publications in Conference Proceedings
C. Elias, Y. Cordier, M. Hugues, Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScxAl1-xN alloy on GaN, Proc. of 45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 16th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE/EXMATEC 2022), Ponta Delgada, Sao Miguel Island, Azores (Portugal), May 3-6, 2022, OP37-OP38.
C. Mauduit, T. Slimani Tlemcani, A. Yvon, E. Collard, M. Charles, R. Gwoziecki, D. Alquier, Alternatives to Standard Ni/Au Stack for Low Resistance p-GaN Ohmic Contacts, Proc. of 45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 16th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE/EXMATEC 2022), Ponta Delgada, Sao Miguel Island, Azores (Portugal), May 3-6, 2022, OP82-OP83.
F. Roccaforte, G. Greco, F. Giannazzo, P. Fiorenza, S. Di Franco, P-M. Coulon, E. Frayssinet, Y. Cordier, Study of Ni Schottky barrier on GaN epilayers grown on bulk substrates, Proc. of 45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 16th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE/EXMATEC 2022), Ponta Delgada, Sao Miguel Island, Azores (Portugal), May 3-6, 2022, OP84-OP85.
M. Fregolent, G. Munari, T. Bordignon, C. De Santi, E. Bahat Treidel, O. Hilt, J Würfl, G. Meneghesso, E. Zanoni, M. Meneghini, Deep levels and Threshold Voltage Instability in Vertical a-Plane Oriented GaN MISFETs, Proc. of 45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 16th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE/EXMATEC 2022), Ponta Delgada, Sao Miguel Island, Azores (Portugal), OP110-OP111.
G. Greco, P. Fiorenza, F. Giannazzo, M. Moschetti, C. Miccoli, F. Iucolano, F. Roccaforte, Electron and hole trapping in the threshold voltage instability of normally-off p GaN-gate HEMTs, Proc. of 45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 16th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE/EXMATEC 2022), Ponta Delgada, Sao Miguel Island, Azores (Portugal), OP119-OP118.
S. Pennisi. F. Pulvirenti, K. Samperi, Frequency Compensation Scheme for a Full GaN OpAmp driving 1-nF load, Proc. of the 55th IEEE International Symposium on Circuits and Systems (ISCAS 2022), Austin, TX (USA), May 28 – June 1, 2022, pp. 2042-2046.
K. Samperi, S. Pennisi, F. Pulvirenti and G. Palmisano, 1-mS constant-Gm GaN transconductor with embedded process compensation – Proc. of 17th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME2022), Villasimius (Italy), 12-16 June 2022, pp. 73-76.
S. Mita, A. Sujeeth, G. Aiello, D. Patti, F. Gennaro, G. Scelba, M. Cacciato, Power Loss Modelling of GaN HEMT-based 3L-ANPC Three-Phase Inverter for different PWM Techniques – Proc. of 24th European Conference on Power Electronics and Applications (EPE 2022 ECCE Europe), Hannover (Germany), 5-9 September 2022, pp. P1-P10; ISBN: 978-9-0758-1539-9.
L. Balestra, F. Ercolano, E. Gnani, S. Reggiani, TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE – Proc. 53rd Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2022), Pizzo (Italy), 7-9 September 2022, IEEE Access 11, 6293-6298 (2023).
V. Janíček, J. Kroutil, T. Teplý, “Energy Harvesting in Smart Access Systems – Review” – Proc. of 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2022). Smolenice, Slovakia, October 23-26, 2022, p. 33-36. ISBN 978-1-6654-6977-7.
M. Husak, M. Hasek, V. Janicek, J. Novak, A. Boura, J. Foit, “Use of Thermally Stressed GaN Semiconductor Structures for Electricity Generation” – Proc. of 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2022). Smolenice, Slovakia, October 23-26, 2022, p. 61-64. ISBN 978-1-6654-6977-7.
M.Husak, A.Budkova, T.Pycha, A.Laposa, V.Povolny, V.Janicek, J.Novak, A.Boura, J.Foit, Micro Power Supply Based on Piezoelectric Effect – Proc. of 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2022). Smolenice, Slovakia, October 23-26, 2022, p. 65-68. ISBN 978-1-6654-6977-7.
V. Janíček,A. Bouřa, T. Teplý, J. Kroutil, M. Husák, “Generator Characterization for Energy Harvester Applications” – Prof. IMAPS Flash Conference 2022, 8th International Microelectronics Assembly and Packaging Society Flash Conference, Brno, Slovakia, October 28-30, 2022, p. 40-41. ISBN 978-80-214-6111-6.
Vella, G. Galioto and G.C. Giaconia, Microcontroller Based Portable Measurement System for GaN and SiC Devices Characterization, In: Berta, R., De Gloria, A. (eds) Applications in Electronics Pervading Industry, Environment and Society. ApplePies 2022. Lecture Notes in Electrical Engineering, vol 1036. Springer, Cham. (2023).
C. Elias, S. Chenot, F. Bartoli, S. El-Whibi, J-C. De Jaeger, M. Lesecq, M. Hugues, Y. Cordier, Evaluation of the electrical properties of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 17-18.
G. Greco, P. Fiorenza, F. Giannazzo, M. Moschetti, C. Venuto, F. Iucolano, F. Roccaforte, Correlation between gate current transport and degradation mechanisms in p GaN-gate HEMTs, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 111-112.
G. Luongo, G. Giorgino, M. Cioni, C. Miccoli, M. Moschetti, M. E. Castagna, F. Iucolano, Gate Leakage Transport Mechanism Analysis for p-GaN Power HEMTs, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 115-116.
M. Cioni, G. Giorgino, G. Cappellini, A. Chini, C. Miccoli, M. E. Castagna, M. Moschetti, C. Tringali, F. Iucolano, Temperature Effect on RON-degradation induced by Off-state Drain Voltage Stress, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 117-118.
G. Giorgino, M. Cioni, G. Cappellini, F. Iucolano, C. Miccoli, M. E. Castagna, M. Moschetti, C. Tringali, A. Chini, Improved High Temperature Behaviour of On-Resistance in 100V p-GaN HEMTs, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 119-120.
N. Zagni, A. Chini, G. Verzellesi, M. Cioni, G. Giorgino, M. C. Nicotra, M. E. Castagna, F. Iucolano, Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 121-122.
Nowak, B. Mohamad, S. Bécu, J. Biscarrat, C. Masante, C. Piotrowicz, P. Pimenta-Barros, C. Leurquin, W. Vandendaele, C. Le Royer, Recent Achievements in Recessed Gate MOS-HEMT Technology, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 131-132.
Z. Lyu, T. Slimani Tlemcani, G. Rouvre, K. Nadaud, J. Billoué, D. Alquier, Exploring the Effectiveness of Ni/ITO Ohmic Contact on p-Type GaN, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 190-191.
N. Lecci, F. Scrimizzi, How to exploit the intrinsic GaN technology features: application hints and integrated solutions performance evaluation, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 198-199.
G. Iuzzolino, E. Bianconi, S. Basile, G. Loreggia, GaN based devices integration in the electric vehicle world, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 200-201.
A. Busacca, M. Calabretta, P. Cusumano, G. Garraffa, A. A. Messina, D. Scirè, A. Sferlazza, G. Vitale, Comparison between SiC and GaN switching devices in fast-recharging systems for electric vehicles, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 202-203.
A. Giordano, A. Di Cataldo, H. Eivazi, G. Aiello, F. Gennaro, G. Scelba, Performance Evaluation of GaN Technology on Multi Level Inverters for Electric Traction Systems, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 204-205.
A. Vella, G. Galioto, G. Vitale, G. Lullo, G. C. Giaconia, GaN and SiC devices’ input capacitance experimental characterization, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 206-207.
M. E. Castagna, M. Marchesi, C. Miccoli, M. Moschetti, G. Giorgino, M. Cioni, C. Tringali, A. Chini, F. Iucolano, GaN on Si Power and RF Devices and Application, Proc. of 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), Palermo (Italy), 21-25 May 2023, pp. 212-216.
K. Samperi, N. Spina, S. Pennisi and G. Palmisano, “Integrated GaN digital soft start-up for switching power converters“, Proc. of 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME 2023), Valencia, Spain, June 18-21 2023, pp. 193-196.
K. Samperi, S. Pennisi, F. Pulvirenti, “High-Speed all-GaN Gate Driver with reduced power consumption”, Proc. of 21st IEEE Interregional NEWCAS Conference – IEEE NEWCAS 2023, Edimburg (Scotland), 26-28 June 2023, pp. 1-5.
F. Ercolano, L. Balestra, S. Krause, S. Leone, I. Streicher, P. Waltereit, M. Dammann, S. Reggiani, “Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations”, Proc. of 2023 IEEE International Integrated Reliability Workshop (IIRW 2023), South Lake Tahoe, CA, USA, 2023, pp. 1-7.
G. Baia, S. De Caro, S. Foti, H. H. Khan, A. Testa, “Efficiency Assessment of an Open-End Winding Inverter Exploiting a Mixed Si/GaN Technology“, 2023 25th European Conference on Power Electronics and Applications (EPE’23 ECCE Europe), Aalborg, Denmark, 4-8 September 2023, pp. 1-9.
E. Schilirò, G. Greco, P. Fiorenza, S. E. Panasci, S. Di Franco, R. Lo Nigro, F. Giannazzo, F. Roccaforte, “Effects of annealing treatment on vertical Al2O3/GaN capacitors”, Proc. of the international conference WOCSDICE-EXMATEC 2024, Edts. K. Zekentes and E. Iliopoulos, Heraklion Crete (Greece), May 19-23 2024, pp. 32-33.
Q. Paoli, F. Cayrel, L. Barreau, D. Alquier, “Robustness of the Au/Ni ohmic contact on p-type GaN through microelectronic manufacturing processes”, Proc. of the international conference WOCSDICE-EXMATEC 2024, Edts. K. Zekentes and E. Iliopoulos, Heraklion Crete (Greece), May 19-23 2024, pp. 34-35.
C. Elias, S. Chenot, F. Bartoli, P. Vennéguès, M. Hugues, Y. Cordier, “ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy”, Proc. of the international conference WOCSDICE-EXMATEC 2024, Edts. K. Zekentes and E. Iliopoulos, Heraklion Crete (Greece), May 19-23 2024, pp. 59-60.
G. Greco, S. Milazzo, S. Di Franco, P. Fiorenza, F. Giannazzo, S. Mirabella, L. Gervasi, F. Iucolano, F. Roccaforte, “Forward conduction mechanism in W-based Schottky contacts on AlGaN/GaN heterostructures”, Proc. of the international conference WOCSDICE-EXMATEC 2024, Edts. K. Zekentes and E. Iliopoulos, Heraklion Crete (Greece), May 19-23 2024, pp. 96-97.
M. Cioni, G. Giorgino, A. Chini, G. Marletta, C. Miccoli, M. E. Castagna,G. Luongo, M. Moschetti, C. Tringali, F. Iucolano, “Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs“, Proc.of 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), Charlotte, NC, USA, 4-6 December 2023, pp. 1-5.
A. Di Cataldo, G. Aiello, D. Patti, G. Scelba, M. Cacciato, F. Gennaro – “Design of a Modular GaN-based Three-Phase Three-Level ANPC Inverter”, Proc. 15th International Conference ELEKTRO 2024, Zakopane (Poland), May 20-22 2024.
Other publications
L. Liggio, The material of the future, Platinum on-line, pag. 107, March 2022.