Link: WOCSDICE-EXMATEC 2024

The 47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024) was held in the city of Heraklion, in Crete, Greece.

Four oral presentations were given at the conference WOCSDICE-EXMATEC 2024, by the Gan4AP partners DTSMSN-CNR, UNITOU, and CNRS-CRHEA. Specifically, the speakers covered the following topics:

  • E. Schilirò (DTSMNS-CNR) – Effects of annealing treatment on vertical Al2O3/GaN capacitors
  • Q. Paoli (UNITOU) – Robustness of the Au/Ni ohmic contact on p-type GaN through microelectronic manufacturing processes
  • Y. Cordier (CNRS-CHREA) – ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy
  • G. Greco (DTSMNS-CNR) – Forward conduction mechanism in W-based Schottky contacts on AlGaN/GaN heterostructures